We report the realization of (a) an optically bistable switch using a
strained resonant tunneling diode (RTD) and (b) highly strained RTDs
exhibiting simultaneously high peak current densities (Jp) and
peak-to-valley current ratios (PVR) suitable for high-speed electronic
switching. Both of these make use of RTDs with
(InAs)M/(GaAs)N strained short period multiple
quantum well regions with AlAs barriers in a triple-well, double barrier
structure. For the former, high contrast ratio (20:1) and an on state
reflectivity of 46.5 % has been obtained at room temperature in an optically
bistable switch involving a strained InGaAs/GaAs (100) multiple quantum well
based asymmetric Fabty-Perot reflection modulator, detector, and a strained
RTD and a Si field effect transistor. For the latter, we have obtained a
Jp of 125 kA/cm2 with a PVR of 4.7 at room
temperature.